美股詳情

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Roundhill Memory ETF

57.78

+2.454.43%

盤前：58.460.6800+1.18%04:29 EDT

成交量：2,285.01萬

成交額：13.16億

市值：252.25億

市盈率：- -

高：58.13

開：56.91

低：56.91

收：55.33

52周最高：81.34

52周最低：26.14

股本：4.37億

流通股本：4.37億

量比：0.81

換手率：5.23%

股息：- -

股息率：- -

淨資產收益率：--

總資產收益率：--

市淨率：--

市盈率(LYR):- -

資料載入中...

總覽公司新聞資訊公告

A股午評：創業板指漲1.33%，超3800股上漲！種植業、存儲芯片板塊領升

A股存儲芯片板塊走高，盈方微漲停，有研新材、沃格光電、博敏電子此前漲停，德邦科技、天準科技、概倫電子、中微半導、中科飛測

存儲芯片巨頭大漲，成交額A股第一

存儲芯片概念震盪走強普冉股份漲近10%

A股收評：主要指數齊漲！存儲芯片、CPO掀漲停潮，白酒領跌

近一周融資資金加碼存儲芯片賽道

中微半導體：上半年淨利潤1.72億元按年增98.48%，1.66億押注NOR Flash存儲芯片｜財報見聞

华尔街见闻

萬億存儲芯片巨頭，目標價大幅上調

「所有人都搶存儲芯片，像一場戰爭」

零售數據爆冷！存儲芯片逆市拉升，閃迪五日大漲35%，無人機概念股狂飆，油價反彈

SK海力士上半年設備投資增逾70% 加碼AI存儲產能

美股開盤｜標普微幅高開；閃迪升逾7%、美光科技漲近3%；存儲芯片板塊走強

SK集團董事長警告明年或迎最嚴重「存儲荒」：這是爭奪存儲芯片的戰爭

SK集團董事長警告明年或迎最嚴重「存儲荒」：這是爭奪存儲芯片的戰爭

消息稱三星計劃改變原定用於生產DRAM的器興新工廠生產線用途

愈升愈有！美股存儲概念盤前升幅擴大，閃迪升逾7%，美光科技、西部數據漲3%

老虎资讯综合

告別「不排除」：SK海力士赴美實地選址前端晶圓廠，AI巨頭施壓倒逼內存供應鏈重構

华尔街见闻

A股收評：創業板指漲1.12%！CPO、存儲芯片走強，電力股低迷

A股收評：縮量上漲！創業板指漲1.12%，CPO、存儲芯片板塊領升

三星電子擬將器興 NRD-K 研發產線改為晶圓代工用途，目標 HBM 用 2nm 基礎芯片量產

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Flash存储赛道。","market":"sg","thumbnail":null,"type":0,"news_type":0,"thumbnails":[],"rights":null,"property":["earning"],"language":"zh","translate_title":"","themeId":null,"theme_name":"","theme_type":"","isJumpTheme":false,"source_url":"https://wallstreetcn.com/articles/3779536","is_publish_highlight":false,"source_rank":0,"column":"","sentiment":"0","news_top_title":null,"news_tag":"dataReport","news_rank":0,"length":0,"strategy_id":0,"source":null,"symbols":["DRAM","MUD","09747","RAM","DRMY","688380","DISK","HBMX","DRMP","FTXL"],"isVideo":false,"video":null,"gpt_icon":0},{"id":"2659318174","title":"萬億存儲芯片巨頭，目標價大幅上調","url":"https://stock-news.laohu8.com/highlight/detail?id=2659318174","media":"中新经纬","labels":[],"top":-1,"itemType":null,"share":"https://ttm.financial/m/news/2659318174?lang=zh_tw&edition=fundamental","pubTime":"2026-08-16 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基礎芯片量產","url":"https://stock-news.laohu8.com/highlight/detail?id=2659611565","media":"链捕手","labels":["productRelease"],"top":-1,"itemType":null,"share":"https://ttm.financial/m/news/2659611565?lang=zh_tw&edition=fundamental","pubTime":"2026-08-14 14:20","pubTimestamp":1786688442,"startTime":"0","endTime":"0","summary":" ChainCatcher 消息，据韩媒 ZDNet Korea 报道，三星电子正调整其器兴园区 NRD-K 2 号产线的原定用途，从研发设施改为晶圆代工产线，主要目标产品为英伟达 HBM 所需的 2nm 基础芯片。该产线预计将于 2028 年下半年启用，采用“Send-Fab”模式，即从其他量产线接收晶圆并代工特定工序。\n\nNRD-K 是三星电子为抢占未来半导体技术而建设的最尖端复合研发园区，总投资约 20 万亿韩元，共规划 3 条产线，其中第 1 条已于 2024 年底竣工。此次调整旨在提前应对 AI 基础设施投资带动的 HBM 需求扩张。三星计划在定制 HBM 及 HBM5 上率先应用 2nm 工艺以保持性能优势。\n\n业内人士指出，NRD-K 2 号线规模相对较小，适合以 Send-Fab 形式运作。但距离产线启用仍有约两年时间，最终用途仍可能根据市场形势再次调整。三星此前曾考虑将该产线用于 DRAM 生产，相关计划在本月被修改后，DRAM 产能将更集中于平泽园区。设备采购订单尚未正式发出。 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